en Research Paper Research Paper <span style="font-size:11pt"><span style="line-height:150%"><span style="font-family:Calibri,sans-serif"><span lang="EN" style="font-size:14.0pt"><span style="line-height:150%"><span new="" roman="" style="font-family:" times="">In this work, the effect of variation of the non-ideality coefficient of the p-n-junction volt-ampere (I-V) characteristic located in the strong microwave field on the differential resistance, diffusion capacitance and differential conductance is studied.</span></span></span> <span lang="EN" style="font-size:14.0pt"><span style="line-height:150%"><span new="" roman="" style="font-family:" times="">Here, it is shown that the p-n junction I-V characteristics increases with the value of the non-ideality coefficient, whether the differential resistance is in a strong microwave field or a weak microwave field.</span></span></span> <span lang="EN" style="font-size:14.0pt"><span style="line-height:150%"><span new="" roman="" style="font-family:" times="">Diffusion capacitance and differential conductance are shown to decrease with increasing value of non-ideality coefficient.</span></span></span><span lang="EN-US" style="font-size:14.0pt"><span style="line-height:150%"><span style="font-family:"Times New Roman",serif"></span></span></span></span></span></span><br> &nbsp; ,p-n junction,strong microwave field,differential resistance,diffusion capacitance,differential conductance 30 37 http://ijmse.iust.ac.ir/browse.php?a_code=A-10-4925-1&slc_lang=en&sid=1 Bakhrom Abdulazizov abdulazizovbahromjon@gmail.com 1800319475328460018946 1800319475328460018946 Yes Namangan State University, Uychi str. 316, 716019, Namangan, Uzbekistan